Manufacturing Process of Silicon Carbide

Manufacturing Process of Silicon Carbide

Due to its low natural content, silicon carbide is mostly man-made. The common method is to mix quartz sand with coke, use the silica and petroleum coke in it, add salt and sawdust, put it in an electric furnace, and heat it to a high temperature of about 2000 °C. After various chemical treatments, silicon carbide fine powder is obtained.

Silicon carbide (SiC) has high hardness and is an essential abrasive, but its application range exceeds that of ordinary abrasives. For example, its high temperature resistance and thermal conductivity make it one of the preferred kiln furniture materials for tunnel kilns or shuttle kilns, and its electrical conductivity makes it an essential electric heating element. To prepare silicon carbide products, the first step is to prepare silicon carbide frit [or silicon carbide pellets, which contain carbon and are super hard, so silicon carbide pellets were once called: silicon carbide. But beware: it is different from natural emery (also known as garnet). In industrial production, silicon carbide frit usually uses quartz, petroleum coke, etc. as raw materials, and recycles auxiliary materials and waste materials. After grinding and other processes, they are formulated into furnaces with reasonable proportions and suitable particle size. Wood chips, green silicon carbide is prepared by adding the right amount of salt) at high temperature. The thermal equipment for preparing silicon carbide frit at high temperature is an independent silicon carbide electric furnace. Its structure consists of the bottom of the furnace, the end wall with embedded electrodes, the removable side wall, and the furnace core (full name: electric heating center of the furnace, generally graphite powder or petroleum coke is installed in the center of the furnace). Charge according to a certain shape and size, generally round or rectangular. Both ends are connected to electrodes). The firing method adopted by the electric furnace is commonly known as buried powder firing. Once power is applied, heating begins. The furnace core temperature is around 2500°C or even higher (2600-2700°C). When the charge reaches 1450°C, SiC is synthesized (but SiC is mainly formed at ≥1800°C) and co is released. However, SiC will decompose at ≥2600 °C, but the decomposed si will form SiC with C in the charge. Each group of electric furnaces is equipped with a set of transformers, but only one electric heater is provided in the production process, and the voltage is adjusted according to the characteristics of the electric load to keep the power constant. High-power electric heater heats for about 24 hours. After a period of cooling, the side walls can be removed and the charge can be gradually removed. Synthesizes SiC (but SiC is mainly formed at ≥1800°C) and releases co. However, SiC will decompose at ≥2600 °C, but the decomposed si will form SiC with C in the charge. Each group of electric furnaces is equipped with a set of transformers, but only one electric heater is provided in the production process, and the voltage is adjusted according to the characteristics of the electric load to keep the power constant. High-power electric heater heats for about 24 hours. After a period of cooling, the side walls can be removed and the charge can be gradually removed. Synthesizes SiC (but SiC is mainly formed at ≥1800°C) and releases co. However, SiC will decompose at ≥2600 °C, but the decomposed si will form SiC with C in the charge. Each group of electric furnaces is equipped with a set of transformers, but only one electric heater is provided in the production process, and the voltage is adjusted according to the characteristics of the electric load to keep the power constant. High-power electric heater heats for about 24 hours. After a period of cooling, the side walls can be removed and the charge can be gradually removed. Each group of electric furnaces is equipped with a set of transformers, but only one electric heater is provided in the production process, and the voltage is adjusted according to the characteristics of the electric load to keep the power constant. High-power electric heater heats for about 24 hours. After a period of cooling, the side walls can be removed and the charge can be gradually removed. Each group of electric furnaces is equipped with a set of transformers, but only one electric heater is provided in the production process, and the voltage is adjusted according to the characteristics of the electric load to keep the power constant. High-power electric heater heats for about 24 hours. After a period of cooling, the side walls can be removed and the charge can be gradually removed.

Nano silicon carbide overview

SiC nanomaterials have high forbidden band width, high critical breakdown electric field and thermal conductivity, small dielectric constant and high electron saturation mobility, as well as strong radiation resistance and good mechanical properties , is an ideal material for high-frequency, high-power electronic and optoelectronic devices, low energy consumption, high temperature resistance, radiation resistance device

Application of nano silicon carbide

Silicon carbide nanomaterials have high forbidden band width, high critical breakdown electric field and thermal conductivity, small dielectric constant and high electron saturation mobility, as well as strong radiation resistance and good mechanical properties. It is an ideal material for high-frequency, high-frequency electronic and optoelectronic devices. High power, low energy consumption, high temperature resistance, radiation resistance. The room-temperature photoluminescence exhibited by SiC nanowires makes them ideal materials for the fabrication of blue light-emitting diodes and laser diodes. Recent studies have shown that micron-sized SiC whiskers have been used to strengthen ceramic matrices, metal matrices and polymer matrix composites. These composites all showed good mechanical properties. As you can imagine, the strength and stiffness are higher, and the aspect ratio is higher. The large-scale SiC one-dimensional nanomaterials as the reinforcement phase of the composites will further enhance its performance. SiC one-dimensional nanomaterials have excellent characteristics such as low threshold field strength, high current density, high temperature stability, etc., and are expected to be used as electric field emission materials. Using this characteristic, the third generation of new electronic light sources can be made, and will be used in image display technology. play a huge role in it. With the deepening of the research, the researchers also found that the excellent characteristics such as one-dimensional high current density and high temperature stability are expected to be used as electric field emission materials. Using this characteristic, the third generation of new electronic light sources can be made, which will be displayed in the image display. It plays a huge role in technology. With the deepening of the research, the researchers also found that the excellent characteristics such as one-dimensional high current density and high temperature stability are expected to be used as electric field emission materials, and the third generation of new electronic light sources can be made by using this characteristic. , and will play a huge role in image display technology. With the deepening of research, researchers also found that one-dimensional SiC nanostructures have broad application prospects in the fields of hydrogen storage, photocatalysis and sensing. Features include large specific surface area, high surface activity, low bulk density, excellent mechanical, thermal, electrical and chemical properties, i.e. high hardness, high wear resistance and good self-lubrication, high thermal conductivity, low thermal expansion coefficient and high temperature strength and other characteristics. Nano silicon carbide powder has the characteristics of high purity, small particle size distribution and high specific surface area: this product has stable chemical properties and high thermal conductivity. Small thermal expansion coefficient, good wear resistance. The microhardness is 2840~3320kg/mm2, the hardness is between corundum and diamond, and the mechanical strength is higher than that of corundum. Nano-silicon carbide has excellent thermal conductivity and is also a kind of semiconductor. It can resist oxidation at high temperature and manufacture structural devices: such as sliding bearings, liquid fuel nozzles, crucibles, high-power high-frequency molds, semiconductor components, etc. It is used in metallurgy, chemical industry, Machinery, aerospace, energy and other industries. Surface treatment of metals and other materials: composite materials such as tools, molds, heat-resistant coatings, heat-dissipating surface coatings, anti-corrosion coatings and wave-absorbing coatings: preparation of metal-based, ceramic-based and polymer-based composite materials.

Nano silicon carbide price

The price of nano-silicon carbide will change randomly with the production cost, transportation cost, international situation and market supply and demand of nano-silicon carbide. Tanki New Materials Co., Ltd. aims to help industries and chemical wholesalers find high-quality, low-cost nanomaterials and chemicals by providing a full range of customized services. If you are looking for Nano Silicon Carbide products, please feel free to send an inquiry to get the latest price of Nano Silicon Carbide.

Nano silicon carbide suppliers

As a global nano-silicon carbide supplier, Tanki New Materials Co., Ltd. has extensive experience in the performance, application and cost-effective manufacturing of advanced engineering materials. The company has successfully developed a series of powder materials (including boron carbide, hard alloy aluminum, titanium carbide, etc.), high-purity target materials, functional ceramics and structural devices, and provides OEM services.